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BCP68
NPN Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)
4
Thermal Resistance Junction - soldering point1) RthJS

3 2 1
VPS05163
Type BCP68 BCP68-10 BCP68-16 BCP68-25
Maximum Ratings Parameter
Marking BCP 68 1=B BCP 68-10 1 = B BCP 68-16 1 = B BCP 68-25 1 = B
Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C
Package SOT223 SOT223 SOT223 SOT223
Symbol VCEO VCES VCBO VEBO
Values 20 25 25 5 1 2 100 200 1.5 150 -65 .. 150
Unit V V V A mA W C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
17
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCP68
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE hFE ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CES V(BR)CEO Symbol min. Values typ. max. Unit
20 25 25 5 50
-
100 100 -
V
nA A -
BCP68 BCP68-10 BCP68-16 BCP68-25
85 85 100 160
hFE VCEsat VBE(ON)
100 160 250 -
375 160 250 375 0.5 V
DC current gain 1)
IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1
60 -
-
0.6 -
1
AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz
1) Pulse test: t =300s, D = 2%
fT
-
100
-
MHz
2
Nov-29-2001
BCP68
Total power dissipation Ptot = f(TS)
Transition frequency fT = f (IC)
VCE = 5V
10 3 fT MHz 5
BCP 68 EHP00275
1.8
W
P tot
1.2
0.9
10 2
0.6
5
0.3
0 0
15
30
45
60
75
90 105 120
C 150 TS
10 1 10 0
5 10 1
5 10 2
mA
10 3
C
Collector cutoff current ICBO = f (TA)
VCB = 25V
10 5
BCP 68 EHP00276
DC current gain hFE = f (I C)
VCE = 1V
10 3 h FE 5 100 C 10 2 5 25 C -50 C
BCP 68 EHP00277
CBO nA
10 4
10 3
max
10 2
typ
10 1 5
10 1
10 0
0
50
100
C TA
150
10 0 10 0
10 1
10 2
4 10 3 mA 10
C
3
Nov-29-2001
BCP68
Collector-emitter saturation voltage
IC = f (VCEsat ), hFE = 10
BCP 68 EHP00278
Base-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
BCP 68 EHP00279
10 4
10 4
C
mA
C
mA
10 3 5 100 C 25 C -50 C
10 3 5 100 C 25 C -50 C
10 2 5
10 2 5
10 1 5
10 1 5
10 0
0
0.2
0.4
0.6
V
0.8
10 0
0
0.2
0.4
0.6
0.8
V
1.2
V CEsat
V BE sat
Permissible pulse load
Ptotmax / PtotDC = f (tp )
BCP 68 EHP00280
10 3 Ptot max Ptot DC 10 2 5
D=
tp T
tp T
10 1 5
D = 0.0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 10 -6
10 -5
10 -4
10 -3
10 -2 tp
s
10 1
4
Nov-29-2001

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